INFRARED DETECTOR
PROBLEM TO BE SOLVED: To provide an infrared detector having high amplification factor, and operating at low voltage with a simple structure.SOLUTION: A source terminal 105 of an NMOS transistor 102 which is an output stage of a pyroelectric type infrared detection element 100 is connected to a GND...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
16.03.2015
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide an infrared detector having high amplification factor, and operating at low voltage with a simple structure.SOLUTION: A source terminal 105 of an NMOS transistor 102 which is an output stage of a pyroelectric type infrared detection element 100 is connected to a GND in parallel by a resistor 107 and a capacitor 108 for forming a source ground amplification circuit.
【課題】簡便な構成で、増幅率が高く、かつ低電圧で動作する赤外線検出装置を提供する。【解決手段】焦電型赤外線検出素子100の出力段であるNMOSトランジスタ102のソース端子105を抵抗107と容量108によりGNDに並列に接続したソース接地増幅回路を構成した。【選択図】図1 |
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Bibliography: | Application Number: JP20130178501 |