INFRARED DETECTOR

PROBLEM TO BE SOLVED: To provide an infrared detector having high amplification factor, and operating at low voltage with a simple structure.SOLUTION: A source terminal 105 of an NMOS transistor 102 which is an output stage of a pyroelectric type infrared detection element 100 is connected to a GND...

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Bibliographic Details
Main Author UTSUNOMIYA FUMIYASU
Format Patent
LanguageEnglish
Japanese
Published 16.03.2015
Subjects
COLORIMETRY
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
TESTING
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Summary:PROBLEM TO BE SOLVED: To provide an infrared detector having high amplification factor, and operating at low voltage with a simple structure.SOLUTION: A source terminal 105 of an NMOS transistor 102 which is an output stage of a pyroelectric type infrared detection element 100 is connected to a GND in parallel by a resistor 107 and a capacitor 108 for forming a source ground amplification circuit. 【課題】簡便な構成で、増幅率が高く、かつ低電圧で動作する赤外線検出装置を提供する。【解決手段】焦電型赤外線検出素子１００の出力段であるＮＭＯＳトランジスタ１０２のソース端子１０５を抵抗１０７と容量１０８によりＧＮＤに並列に接続したソース接地増幅回路を構成した。【選択図】図１
Bibliography:Application Number: JP20130178501