SILICON CARBIDE SUBSTRATE AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: NISHIGUCHI TARO, SASAKI MAKOTO, KAWASE TOMOHIRO, OKITA KYOKO, UETA SHUNSAKU, OI NAOKI, HORI TSUTOMU
• Format: Patent
• Language: English; Japanese
• Published: 16.03.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a production method of a silicon carbide single crystal capable of obtaining a high-quality silicon carbide single crystal, and to provide a silicon carbide substrate used therefor.SOLUTION: A silicon carbide substrate 100 has a first principal surface P1 and a second principal surface P2 positioned on the opposite side to the first principal surface P1. In a cross section vertical to the first principal surface P1, the width D1 of the first principal surface P1 is larger than the width D2 of the second principal surface P2. 【課題】高品質な炭化珪素単結晶を得ることができる炭化珪素単結晶の製造方法と、それに用いる炭化珪素基板とを提供する。【解決手段】炭化珪素基板１００は、第１の主面Ｐ１と第１の主面Ｐ１の反対側に位置する第２の主面Ｐ２とを有し、第１の主面Ｐ１に対する垂直断面において、第１の主面Ｐ１の幅Ｄ１が第２の主面Ｐ２の幅Ｄ２よりも大きい。【選択図】図５