SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: KARIU KOSUKE, YOSHIMURA SHOTA, OZU TOSHIHISA, OTAKE HIROTO, TSUKAMOTO TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 02.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit the residue of a polycrystalline silicon layer and minimize the damage of a base metal layer.SOLUTION: A semiconductor device manufacturing method comprises a process of exciting a processing gas containing HBr gas and Clgas in a processing container in which a workpiece including a substrate, a region made of silicon which swells from the substrate and provided to define a clearance, a metal layer provided to cover the region, a polycrystalline silicon layer provided on the metal layer and an organic mask provided on the polycrystalline silicon layer. The Clgas is supplied at a flow rate of not less than 5% and not more than 10% with respect to a flow rate of the HBr gas in the processing gas. 【課題】多結晶シリコン層の残留を抑制し、下地の金属層のダメージを抑制することが可能な、半導体デバイスを製造する方法を提供する。【解決手段】基板、該基板から隆起し且つ間隙を画成するよう設けられたシリコン製の領域、該領域を覆うように設けられた金属層、該金属層上に設けられた多結晶シリコン層、及び、該多結晶シリコン層上に設けられた有機マスクを含む被処理体が収容された処理容器内において、ＨＢｒガス及びＣｌ２ガスを含む処理ガスを励起させる工程を含み、Ｃｌ２ガスは、処理ガス中のＨＢｒガスの流量に対して５％以上１０％以下の流量で供給される。【選択図】図１