SUBSTRATE CLEANING DEVICE, SUBSTRATE CLEANING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM

• Main Authors: KYODA HIDEJI, MUTA KOSHI
• Format: Patent
• Language: English; Japanese
• Published: 02.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CLEANING; CLEANING IN GENERAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PERFORMING OPERATIONS; PREVENTION OF FOULING IN GENERAL; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a substrate cleaning device which can further inhibit the occurrence of development defects.SOLUTION: A processing procedure unit U1 comprises: a rotation holding unit 20 for rotating a wafer W and liquid nozzles h2-h5 for discharging cleaning liquid onto a surface Wa of the wafer W. At an arrival point on the surface Wa of the wafer W where the cleaning liquid discharged from the liquid nozzles h2-h5 arrives, a current direction of the cleaning liquid is set to be in a direction matching a linear speed direction of the wafer W. During the rotation of the wafer W and while the liquid nozzles h2-h5 are moving from a center side to a peripheral side of the wafer W, a discharging speed of the cleaning liquid discharged from the liquid nozzles h2-h5 is controlled so that a difference between a flow rate of the cleaning liquid at the arrival point and a linear speed of the wafer W at the arrival point falls within a predetermined range. 【課題】現像欠陥の発生をより一層抑制することが可能な基板洗浄装置を提供する。【解決手段】現像処理ユニットＵ１は、ウエハＷを回転させる回転保持部２０と、ウエハＷの表面Ｗａに洗浄液を吐出する液ノズルｈ２〜ｈ５とを備える。液ノズルｈ２〜ｈ５から吐出された洗浄液がウエハＷの表面Ｗａに到達した到達地点において、当該洗浄液の流向は、ウエハＷの線速度方向に沿う向きとなるように設定されている。ウエハＷの回転中で且つ液ノズルｈ２〜ｈ５がウエハＷの中央側から周縁側に向けて移動中、到達地点における洗浄液の流速と到達地点におけるウエハＷの線速度との差が所定の範囲内となるように、液ノズルｈ２〜ｈ５から吐出される洗浄液の吐出速度が制御される。【選択図】図４