FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• Main Authors: HAYASHI TATSUYA, NAGAE EKISHU, MIYAUCHI MITSUSUKE, KYO YUSHO, SAMORI SHINGO
• Format: Patent
• Language: English; Japanese
• Published: 19.02.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of efficiently forming an antifouling film which is enhanced in abrasion resistance more, not to mention durability to practical use.SOLUTION: A film deposition apparatus 1 in which a substrate holder 12 having a base body holding surface for holding a plurality of substrates 14 is arranged rotatably in a vacuum container 10 includes: a vapor deposition source 34 which is installed in the vacuum container 10 and configured to supply a film deposition material to a first region (A3) as a partial region on the substrate holding surface by a larger amount than to the other region (remaining region) other than the first region when placed in operation while directed to the substrate holder 12 at a rotation stop; and an ion source 38 which is installed in the vacuum container 10, and configured, arranged, and/or directed to irradiate only a second region (A2) as a partial region on the base body holding surface with energy particles when placed in operation while directed to the substrate 12 at the rotation stop. 【課題】 実用に耐えうることは勿論、耐摩耗性能がより高められた防汚膜を効率よく成膜することができる成膜装置を提供する。【解決手段】 複数の基板１４を保持するための基体保持面を持つ基板ホルダ１２が真空容器１０内に回転可能に配設された成膜装置１において、回転停止しているときの基板ホルダ１２に向けて作動させた場合に、前記基体保持面の一部の領域である第１領域（Ａ３）に対して、該第１領域以外の他の領域（残領域）よりも多い量の成膜材料を供給可能となる構成で真空容器１０内に設置された蒸着源３４と、回転停止しているときの基板ホルダ１２に向けて作動させた場合に、その基体保持面の一部の領域である第２領域（Ａ２）のみに向けてエネルギー粒子が照射可能となる構成、配置及び／又は向きで真空容器１０内に設置されたイオン源３８とを、有する構成の成膜装置１である。【選択図】 図１