DEVELOPMENT APPARATUS, DEVELOPMENT METHOD AND STORAGE MEDIUM

• Main Authors: KYODA HIDEJI, TAKIGUCHI YASUSHI, MUTA KOSHI, YOSHIHARA KOSUKE, YAMAMOTO TARO
• Format: Patent
• Language: English; Japanese
• Published: 16.02.2015
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; SEMICONDUCTOR DEVICES; SPRAYING OR ATOMISING IN GENERAL; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a technique for enhancing the uniformity of the line width of a resist pattern in the plane of a substrate, when developing a substrate subjected to exposure.SOLUTION: A development apparatus is constituted to include a substrate holding section for holding a substrate horizontally, a developer nozzle for forming a liquid reservoir by supplying the developer to the substrate, a swirl flow generation mechanism including a rotary member rotating about an axis orthogonal to the substrate in a state in contact with the liquid reservoir, and generating a swirl flow in the liquid reservoir of developer formed on the substrate, and a movement mechanism for moving the swirl flow generation mechanism along the surface of the substrate. Since the developer can be stirred by forming a swirl flow in a desired region of the substrate, uniformity of the line width of a resist pattern can be enhanced. 【課題】露光後の基板に現像処理を行うにあたり、基板の面内におけるレジストパターンの線幅の均一性を高くすることができる技術を提供すること。【解決手段】基板を水平に保持する基板保持部と、基板に現像液を供給して液溜まりを形成するための現像液ノズルと、前記液溜まりに接触した状態で基板と直交する軸の周りに回転する回転部材を含み、前記基板に形成された現像液の液溜まりに旋回流を発生させる旋回流発生機構と、前記旋回流発生機構を基板の表面に沿って移動させる移動機構と、を備えるように構成する。これによって、基板の所望の領域に旋回流を形成して、現像液を撹拌することができるので、パターンの線幅の均一性の向上を図ることができる。【選択図】図３