SOLID-STATE IMAGING APPARATUS, AND MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS

• Main Author: TANIDA KAZUMA
• Format: Patent
• Language: English; Japanese
• Published: 16.02.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of improving light reception sensitivity without thinning a light shielding part, and a manufacturing method of the solid-state imaging apparatus.SOLUTION: A solid-state imaging apparatus is provided. The solid-state imaging apparatus comprises a semiconductor layer and a light shielding part. A plurality of photoelectric conversion elements are arranged in a two-dimensional array shape. The light shielding part is provided within the semiconductor layer and includes a light shielding member of which the interface with the semiconductor layer is covered with an insulation film. Further, the light shielding part includes a light shielding region and an element separation region. The light shielding region is provided closer to a light receiving surface of the photoelectric conversion element inside of the semiconductor layer and shields light incident to the photoelectric conversion element in a specific direction. The element separation region is provided protrusively from the light shielding region to the plurality of photoelectric conversion elements in a depth direction of the semiconductor layer for electro-optically separating the plurality of photoelectric conversion elements. 【課題】本発明の一つの実施形態は、遮光部を薄化することなく、受光感度を向上させることができる固体撮像装置および固体撮像装置の製造方法を提供することを目的とする。【解決手段】本発明の一つの実施形態によれば、固体撮像装置が提供される。固体撮像装置は、半導体層と、遮光部とを備える。半導体層は、複数の光電変換素子が２次元アレイ状に配列される。遮光部は、半導体層の内部に設けられ、半導体層との界面が絶縁膜によって被覆される遮光部材を有する。さらに、遮光部は、遮光領域と、素子分離領域とを備える。遮光領域は、半導体層の内部における光電変換素子の受光面側に設けられて光電変換素子へ特定の方向から入射する光を遮断する。素子分離領域は、遮光領域から複数の光電変換素子の間へ向け、半導体層の深さ方向へ凸設されて複数の光電変換素子を電気的光学的に素子分離する。【選択図】図４