ELEMENT ISOLATION METHOD IN GaN LAYER

PROBLEM TO BE SOLVED: To provide an element isolation method in a GaN layer capable of efficiently isolating an element in the GaN layer.SOLUTION: The element isolation method in a GaN layer is an element isolation method for isolating the GaN layer into plural elements by performing etching on a Ga...

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Bibliographic Details
Main Authors FURUKAWA RYOTA, OKITA SHOGO
Format Patent
LanguageEnglish
Japanese
Published 05.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an element isolation method in a GaN layer capable of efficiently isolating an element in the GaN layer.SOLUTION: The element isolation method in a GaN layer is an element isolation method for isolating the GaN layer into plural elements by performing etching on a GaN layer disposed on a substrate after a masking. A gas mixture added with CHFto BClis used as the etching gas. 【課題】より効率的にＧａＮ層を素子分離することができるＧａＮ層の素子分離方法を提供すること。【解決手段】ＧａＮ層の素子分離方法は、基板上に配置されたＧａＮ層にマスクを付けてエッチングすることにより、ＧａＮ層を複数の素子に分離する素子分離方法であって、エッチングガスとして、ＢＣｌ３にＣＨ２Ｆ２を添加した混合ガスを用いる。【選択図】図１
Bibliography:Application Number: JP20130153583