MASK STRUCTURE OF DOUBLE EXPOSURE AND METHOD FOR EXPOSURE DEVELOPMENT

• Main Authors: LI CHENG SHUAI, HUNG YUNG WEN, SHEN YUN TING
• Format: Patent
• Language: English; Japanese
• Published: 05.02.2015
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a mask structure of double exposure, and a method for exposure development.SOLUTION: In the mask structure of double exposure and the method of exposure development, exposure development is performed to a base material 10, the base material 10 has a central region 11 and a marginal region 12, and the mask structure includes a plurality of first masks 20 separated in a mutually parallel state and also corresponding to the central region 11; a plurality of second masks 30 separated in a mutually parallel state and also corresponding to the central region 11; and a plurality of auxiliary masks 50. These second masks 30 are crossed respectively with the first masks 20, respectively and further form a plurality of superimposed regions 60. These auxiliary masks 50 are non-contact each other, and also assist the superimposed regions 60 corresponding to the surfaces of the second masks 30 in such a manner that these superimposed regions 60 adjacent to the auxiliary masks 50 have sufficient focal depth, and exposure development is performed. In this way, utilizing these auxiliary masks 50, the superimposed regions 60 adjacent to the marginal regions 12 of the central region 11 have satisfactory exposure development effect. 【課題】二重露光のマスク構造及び露光現像の方法の提供。【解決手段】二重露光のマスク構造及び露光現像の方法は基材１０に対して露光現像を行ない、該基材１０は中心領域１１と辺縁領域１２を具え、該マスク構造は複数の、相互に平行で離間し、且つ該中心領域１１に対応する第１マスク２０、複数の、相互に平行で離間し、且つ該中心領域１１に対応する第２マスク３０、及び複数の補助マスク５０を包含する。これら第２マスク３０はそれぞれこれら第１マスク２０と交差し、並びに複数の重畳領域６０を形成し、これら補助マスク５０は相互に不接触で、且つこれら第２マスク３０上に対応して、これら補助マスク５０の傍らに隣接するこれら重畳領域６０が十分な焦点深度を有するように補助して露光現像する。これにより、これら補助マスク５０を利用して該中心領域１１の該辺縁領域１２に隣接する重畳領域６０が良好な露光現像効果を有する。【選択図】図３