SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a manufacturing method of the same, which reduces chromatic variation.SOLUTION: A semiconductor light emitting device 10 comprises: three chips 3a, 3b each of which has a semiconductor layer 15 including a first surface 15a,...
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Main Authors | , , |
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Format | Patent |
Language | English Japanese |
Published |
15.01.2015
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a manufacturing method of the same, which reduces chromatic variation.SOLUTION: A semiconductor light emitting device 10 comprises: three chips 3a, 3b each of which has a semiconductor layer 15 including a first surface 15a, a second surface formed on the opposite side and a luminescent layer 12a, a p-side electrode 16 provided on the semiconductor layer, and has an n-side electrode 17; a phosphor layer 31 which is provided on the first surface side of the chips and has phosphor of the same kind and different thicknesses, or a phosphor layer having phosphors of different kinds; and a first insulation layer 18 which is provided on the second surface side, and has, in each chip, first vias 18a leading to the p-side electrodes, second vias 18b leading to the n-side electrodes, and a wiring surface formed on the opposite side to the first surface. The semiconductor light emitting device 10 further comprises: p-side wiring layers 21 which are provided on the wiring surface of the first insulation layer and electrically connected with the p-side electrodes through the first vias, respectively; and n-side wiring layers 22 which are provided on the wiring surface and electrically connected with the n-side electrodes through the second vias, respectively.
【課題】色度ばらつきを低減した半導体発光装置及びその製造方法を提供する。【解決手段】半導体発光装置10は、第1の面15aと反対側に形成された第2の面と発光層12aとを含む半導体層15と、半導体層に設けられたp側電極16と、n側電極17とをそれぞれが含む3つのチップ3a,3bと、チップの第1の面側に設けられた同種類の蛍光体を有し厚さの異なる蛍光体層31、あるいは異なる種類の蛍光体を有する蛍光体層と、第2の面側に設けられ、それぞれのチップにおいて、第p側電極に通じる第1のビア18aと、n側電極に通じる第2のビア18bと、第1の面に対する反対側に形成された配線面とを有する第1の絶縁層18とを備える。第1の絶縁層の配線面上に設けられ、第1のビアを通じてp側電極と電気的に接続されたp側配線層21と、配線面上に設けられ、第2のビアを通じてn側電極と電気的に接続されたn側配線層22とを有する。【選択図】図1 |
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Bibliography: | Application Number: JP20140183598 |