SEMICONDUCTOR DEVICE

• Main Authors: BETSUSHIBA NORIYUKI, ISHII RYUICHI
• Format: Patent
• Language: English; Japanese
• Published: 05.01.2015
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMISTRY; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; TREATMENT OF NATURAL STONE

PROBLEM TO BE SOLVED: To achieve the vibration resistance of a semiconductor device while relaxing the strain between an insulating substrate of a semiconductor module and an adhesive layer of a metal base.SOLUTION: Stress relaxation layers 6 and 7 are provided on circuits 3 and 4 of an insulating substrate in a semiconductor module 9. A metal base with which the semiconductor module is in contact is divided into a thin first metal base 11 having low rigidity and a thick second metal base 13 having high rigidity. The semiconductor module 9 is bonded to the metal base 11, and then the first and second metal bases are bonded to integrate them. 【課題】半導体モジュールの絶縁基板と、金属ベースとの接着層の歪緩和をしたまま、半導体装置の耐振性を確立する。【解決手段】半導体モジュール９内の絶縁基板の回路３、４に応力緩和層６、７を設け、半導体モジュールが接触する金属ベースを、薄肉低剛性の第１の金属ベース１１と厚肉高剛性の第２の金属ベース１３に分割し、半導体モジュール９を第１の金属ベース１１に接着後、第１と第２の金属ベースを接合し一体化する。【選択図】図１