FIELD-EFFECT TRANSISTOR

• Main Author: TANIMOTO SHINJI
• Format: Patent
• Language: English; Japanese
• Published: 05.01.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a field-effect transistor which can increase the maximum current, and which has low ON-resistance.SOLUTION: A field-effect transistor comprises a plurality of unit elements, and has a plurality of annular gate electrodes provided so as to correspond to each unit element, drain electrodes provided in drain electrode formation regions inside the annular gate electrodes, respectively, and source electrodes provided outside the gate electrodes, on a first surface that is one surface of a semiconductor layer, and in the field-effect transistor, a source-gate interval between the source electrode and the gate electrode is smaller than a drain-gate interval between the drain electrode and the gate electrode. The source electrodes are provided so as to be divided into a plurality units with respect to one unit element. The divided source electrodes are provided in source electrode formation regions surrounded by the gate electrodes of the adjacent unit elements. Each of the source electrode formation regions is formed to be smaller than each of the drain electrode formation regions. 【課題】最大電流を大きくでき、かつオン抵抗が低い電界効果トランジスタを提供する。【解決手段】複数の単位素子を備え、単位素子にそれぞれ対応して設けられた複数の環状のゲート電極と、環状のゲート電極の内側のドレイン電極形成領域にそれぞれ設けられたドレイン電極と、ゲート電極の外側に設けられたソース電極と、を半導体層の一表面である第１表面に有し、ソース電極とゲート電極間のソース・ゲート間間隔がドレイン電極とゲート電極間のドレイン・ゲート間間隔より小さい電界効果トランジスタであって、ソース電極を、１つの単位素子に対して複数に分割して設けて、分割されたソース電極は隣接した単位素子のゲート電極によって囲まれたソース電極形成領域に設け、ソース電極形成領域をドレイン電極形成領域より小さくした。【選択図】図１Ａ