METAL FILLING DEVICE

• Main Author: IMAI OSAMU
• Format: Patent
• Language: English; Japanese
• Published: 15.12.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a metal filling device capable of covering the entire surface to be treated with molten metal by keeping voids, composed of a residual gas component, away from the surface to be treated, without thickening the film of the moten metal thereon, and thereby the micro spaces in the entire surface to be treated can be filled with the molten metal.SOLUTION: A metal filling device 1 includes a holding base H for holding a semiconductor wafer K while inclining the surface to be treated by 90° for the horizontal direction, a cylindrical housing C, a piston P provided to freely move back and forth, and the like, and an airtight processing chamber 2 is formed by the semiconductor wafer K held on the holding base H, the housing C and the piston P. Furthermore, the metal filling device 1 includes a pressure reduction mechanism 10, a molten metal supply mechanism 15 for supplying molten metal M into the processing chamber 2, and a deairing mechanism 20 for deairing the molten metal M. 【課題】被処理物上の溶融金属の膜厚を厚くすることなく、残留気体成分からなる空隙を被処理面上から遠ざけ、被処理面全体を溶融金属で覆うことができ、被処理面全体の微小空間内に溶融金属を充填することができる金属充填装置を提供する。【解決手段】金属充填装置１は、半導体ウェハＫを、その処理面が水平方向に対して９０?傾いた状態で保持する保持台Ｈ、筒状のハウジングＣ、進退自在に設けられたピストンＰなどを備えており、保持台Ｈに保持された半導体ウェハＫ、ハウジングＣ及びピストンＰによって気密状の処理室２が形成される。また、この金属充填装置１は、処理室２内を減圧する減圧機構１０、処理室２内に溶融金属Ｍを供給する溶融金属供給機構１５及び溶融金属Ｍの脱気を行う脱気機構２０を備えている。【選択図】図１