SEMICONDUCTOR DEVICE

• Main Author: SUZUMURA NAOHITO
• Format: Patent
• Language: English; Japanese
• Published: 08.12.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve reliability and performance of a semiconductor device having a capacitative element.SOLUTION: In a semiconductor device, a lower electrode LE of a capacitative element C1 is provided in any wiring layer among a plurality of wiring layers formed on a semiconductor substrate, an upper electrode UE of the capacitative element C1 is provided above the lower electrode LE and in a wiring layer two layers above the wiring layer where the lower electrode LE is formed, and a floating electrode FE located between the lower electrode LE and the upper electrode UE is provided in a wiring layer one layer above the wiring layer where the lower electrode LE is formed. 【課題】容量素子を有する半導体装置の信頼性や性能を向上させる。【解決手段】半導体基板上に形成した複数の配線層のうちのいずれかの配線層に、容量素子Ｃ１の下部電極ＬＥを設け、下部電極ＬＥが形成された配線層よりも２つ上層の配線層において、下部電極ＬＥの上方に容量素子Ｃ１の上部電極ＵＥを設ける。そして、下部電極ＬＥが形成された配線層よりも１つ上層の配線層において、下部電極ＬＥと上部電極ＵＥとの間に位置する浮遊電極ＦＥを設ける。【選択図】図８