SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

• Main Authors: NAKAMURA HIROKI, MASUOKA FUJIO
• Format: Patent
• Language: English; Japanese
• Published: 20.11.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an SGT (Surrounding Gate Transistor) manufacturing method which reduces parasitic capacitance between gate wiring and a substrate and which directly connects the metal wiring and an upper part of a columnar silicon layer without forming a contact on the upper part of the columnar silicon layer; and provide a structure of the SGT obtained by the manufacturing method as a result.SOLUTION: A semiconductor device manufacturing method comprises: forming a fin-shaped silicon layer on a silicon substrate; forming a first insulation film around the fin-shaped silicon layer; forming a columnar silicon layer on an upper part of the fin-shaped silicon layer; forming a gate insulation film formed around the columnar silicon layer, a gate electrode formed around the gate insulation film and gate wiring connected to the gate electrode; forming a first diffusion layer formed on an upper part of the columnar silicon layer and a second diffusion layer on a lower part of the columnar silicon layer and the upper part of the fin-shaped silicon layer; forming a first silicide and a second silicide on the first diffusion layer and the second diffusion layer; depositing an interlayer insulation film; and planarizing the interlayer insulation film. 【課題】ゲート配線と基板間の寄生容量を低減し、柱状シリコン層上部のコンタクトを形成せず、金属配線と柱状シリコン層上部を直接接続するＳＧＴの製造方法とその結果得られるＳＧＴの構造を提供する。【解決手段】シリコン基板上にフィン状シリコン層を形成し、前記フィン状シリコン層の周囲に第一の絶縁膜を形成し、前記フィン状シリコン層の上部に柱状シリコン層を形成し、前記柱状シリコン層の周囲に形成されたゲート絶縁膜と、前記ゲート絶縁膜の周囲に形成されたゲート電極と、前記ゲート電極に接続されたゲート配線とを形成し、前記柱状シリコン層の上部に形成された第１の拡散層と、前記柱状シリコン層の下部と前記フィン状シリコン層の上部に第２の拡散層を形成し、前記第１の拡散層上と前記第２の拡散層上に第１のシリサイドと第２のシリサイドを形成し、層間絶縁膜を堆積し、前記層間絶縁膜を平坦化する。【選択図】図１