METHOD OF PRODUCING RESIST COMPOSITION

PROBLEM TO BE SOLVED: To provide a method of producing a resist composition used in e.g. immersion exposure, double patterning and organic solvent image development which method especially reduces coating defects of a silicon-containing resist lower layer film.SOLUTION: A method of producing a resis...

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Bibliographic Details
Main Authors IWABUCHI MOTOAKI, MORISAWA TAKUMI, OGIWARA TSUTOMU, BIYAJIMA YUSUKE
Format Patent
LanguageEnglish
Japanese
Published 20.11.2014
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Summary:PROBLEM TO BE SOLVED: To provide a method of producing a resist composition used in e.g. immersion exposure, double patterning and organic solvent image development which method especially reduces coating defects of a silicon-containing resist lower layer film.SOLUTION: A method of producing a resist composition to be used in a process of producing a semiconductor device comprises filtrating with a filter, and the filter used shows a weight of eluate per filter unit surface area (m) of 5 mg or smaller in extraction with an organic solvent. 【課題】本発明は、液浸露光、ダブルパターニング、有機溶剤現像などに使用されるレジスト組成物、特にケイ素含有レジスト下層膜の塗布欠陥を低減する製造方法を提供する。【解決手段】半導体装置の製造工程で使用するレジスト組成物をフィルターでろ過することによって製造する方法であって、前記フィルターとして有機溶剤による抽出において、フィルター単位表面積(m2)当たりの溶出物の重量が5mg以下のフィルターを用いてろ過することを特徴とするレジスト組成物の製造方法。【選択図】なし
Bibliography:Application Number: JP20130097714