THIN FILM SOLAR CELL AND MANUFACTURING METHOD FOR THE SAME

PROBLEM TO BE SOLVED: To provide a thin layer solar cell using a compound semiconductor film which satisfies both of energy efficiency and sufficiently high production efficiency.SOLUTION: In a thin film solar cell in which a first electrode 102, a photoelectric conversion layer 100 and a second ele...

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Bibliographic Details
Main Author DEGUCHI KOJI
Format Patent
LanguageEnglish
Japanese
Published 06.11.2014
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Summary:PROBLEM TO BE SOLVED: To provide a thin layer solar cell using a compound semiconductor film which satisfies both of energy efficiency and sufficiently high production efficiency.SOLUTION: In a thin film solar cell in which a first electrode 102, a photoelectric conversion layer 100 and a second electrode 105 are laminated on a substrate 101, the photoelectric conversion layer has a laminated constitution of at least a p-type layer 103 and an n-type layer 104; and the p-type layer is composed of Cu, In, Ga and Se in which a composition ratio of Se in the p-type layer film is not less than 40 atom% and less than 50 atom%; and the n-type layer is a compound composed of an element of at least one group selected from group 2, group 7 and group 12, a group 13 element and a group 16 element and at least contains In as the group 13 element and at least contains S as the group 16 element. 【課題】エネルギー効率と十分な高い生産効率を両立させた化合物半導体膜を用いた薄層太陽電池の提供。【解決手段】基板101上に、第1電極102、光電変換層100、第2電極105を積層した薄膜太陽電池において、前記光電変換層が少なくともp型層103とn型層104の積層構成を有し、前記p型層がCu、In、Ga及びSeから成り、かつ、p型層膜のSeの組成比が40原子%以上50原子%未満であり、前記n型層が、2族、7族及び12族から選択される少なくとも1つの族の元素と、13族の元素と、16族の元素とからなる化合物であり、かつ前記13族の元素として少なくともInを含有し、前記16族の元素として少なくともSを含有する薄膜太陽電池。【選択図】図1
Bibliography:Application Number: JP20140049932