SUBSTRATE FOR WET ETCHING

• Main Authors: KUBO SHOICHI, KYO YOSHITETSU, NAKAGAWA MASARU, OTAKE TOMOYUKI
• Format: Patent
• Language: English; Japanese
• Published: 06.11.2014
• Subjects: CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PERFORMING OPERATIONS; PRINTED CIRCUITS; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a substrate for wet etching which enables firm adhesion between a metal of the surface of the substrate and a thermoplastic polymer.SOLUTION: A substrate for wet etching comprises a substrate layer, a metal layer having a surface of a metal oxide, a layer of a UV-sensitive compound of formula (1) and a thermoplastic polymer layer, in this order, and the thermoplastic polymer of the thermoplastic polymer layer is at least one thermoplastic polymer selected from polystyrene and polyvinyl toluene. In formula (1), R1 to R3 are H, a 1-6C hydrocarbon group, etc.; X is O, OCO, COO, NH or NHCO; m is 1-20; R4 is a 1-3C hydrocarbon group; Y is a 1-3C alkoxy group or a halogen atom; and n is 1-3. 【課題】基板表面の金属と熱可塑性高分子とを強固に接着させ得る、ウェットエッチング用基板を提供する。【解決手段】基板層、金属酸化物表面を有する金属層、式（１）に示す感紫外線化合物層、および熱可塑性高分子層をこの順で有し、前記熱可塑性高分子層の熱可塑性高分子が、ポリスチレンおよびポリビニルトルエンから選ばれる少なくとも１種以上の熱可塑性高分子であるウェットエッチング用基板とする。【化１】（Ｒ１〜Ｒ３：Ｈ、Ｃ１〜６の炭化水素基等、Ｘ：Ｏ、ＯＣＯ、ＣＯＯ、ＮＨ、ＮＨＣＯ、ｍ：１〜２０、Ｒ４：Ｃ１〜３の炭化水素基、Ｙ：Ｃ１〜３のアルコキシ基、ハロゲン原子、ｎ：１〜３。）【選択図】図１