SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: NISHIO JOJI, SHIMIZU TATSUO, OTA CHIHARU, SHINOHE TAKASHI
• Format: Patent
• Language: English
• Published: 02.10.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device having an n-type impurity region with low resistance.SOLUTION: The semiconductor device has an n-type SiC impurity region including a p-type impurity and an n-type impurity. When element A is used as the p-type impurity and element D is used as the n-type impurity, in at least one combination of Al, Ga or IN, N, B and P, a ratio of a concentration of the element A to a concentration of the element D forming the combination is more than 0.40 and less than 0.95, and the concentration of the element D forming the combination is equal to or more than 1×10cmand equal to or less than 1×10cm.