PLASMA ETCHING METHOD

PROBLEM TO BE SOLVED: To provide a plasma etching method capable of selectively removing a TiN film at a bottom of a contact hole in a plasma etching method capable of forming a DCV structure having a hole diameter of 30 nm or less.SOLUTION: The plasma etching method of selectively etching an SiN fi...

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Bibliographic Details
Main Authors ISHIMURA HIROAKI, MATSUDA KOHEI, UNE SATOSHI
Format Patent
LanguageEnglish
Published 25.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a plasma etching method capable of selectively removing a TiN film at a bottom of a contact hole in a plasma etching method capable of forming a DCV structure having a hole diameter of 30 nm or less.SOLUTION: The plasma etching method of selectively etching an SiN film at a bottom of a groove or a bottom of a hole plasma etches the SiN film using a gas containing chlorine atoms, fluorine atoms, and carbon atoms.
Bibliography:Application Number: JP20130051174