POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a highly reliable power semiconductor device for high temperature, combining reliability for thermal stress and thermal conductivity.SOLUTION: A power semiconductor device includes an insulating substrate 3 composed of ceramic as a base material 3i, a power semicondu...

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Bibliographic Details
Main Authors NAKAJIMA YASUSHI, FUJINO JUNJI, BETSUSHIBA NORIYUKI
Format Patent
LanguageEnglish
Published 22.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a highly reliable power semiconductor device for high temperature, combining reliability for thermal stress and thermal conductivity.SOLUTION: A power semiconductor device includes an insulating substrate 3 composed of ceramic as a base material 3i, a power semiconductor element 4 bonded to one side (conductor layer 3pside) of the insulating substrate 3, and a cooling member 1 bonded to the other side (conductor layer 3pside) of the insulating substrate 3, via a bonding layer 2 mainly composed of an intermetallic compound with tin. The bonding layer 2 has a porosity that is higher in a part (peripheral edge region R2p) on the outside than in a central region R2c including a region corresponding to the mounting part of the power semiconductor element 4.
Bibliography:Application Number: JP20130046555