SEMICONDUCTOR POWER CONVERSION DEVICE MANUFACTURING METHOD

• Main Authors: WATANABE NAOTAKE, UEDA KAZUHIRO, MASUNAGA TAKAYUKI, MARUNO KOJI, SHIMIZU SADAYUKI, TOGASAKI TAKASHI, NISHIUCHI HIDEO
• Format: Patent
• Language: English
• Published: 22.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a power semiconductor device manufacturing method capable of easily checking a process of a joint part, and improving processing point control and quality control.SOLUTION: In a semiconductor power conversion device manufacturing method according to an embodiment, first and second semiconductor elements 38, 40 are jointed on a first surface of a first joint part 60a of a first lead frame 70 via a connection material so that each one electrode comes into contact with the first surface. A first surface of a second joint part 62a of a second lead frame 72 is jointed on the other electrodes of the first and second semiconductor elements, and a joint state of the first and second semiconductor elements is checked. After checking, the first conductor is jointed to a second surface of the first joint part 60a, and a second conductor is jointed to a second surface of the second joint part. The electrode of the first semiconductor element and a signal end are connected via a conductor wire, and a constituting member is covered with an insulation material to form an insulator. One part of the first and second lead frames is removed, and a bottom face to which bottom faces of the first and second conductors are exposed is formed on the insulator. First and second power terminals are bent and formed.