LOW CAPACITY SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce the capacity of a semiconductor element, even if the element capacity is reduced by contracting the area of a low capacity PN diode, by suppressing increase in parasitic capacity due to a surface electrode.SOLUTION: Since a PN junction of a low concentration second co...

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Bibliographic Details
Main Author ONISHI KAZUHIRO
Format Patent
LanguageEnglish
Published 22.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To reduce the capacity of a semiconductor element, even if the element capacity is reduced by contracting the area of a low capacity PN diode, by suppressing increase in parasitic capacity due to a surface electrode.SOLUTION: Since a PN junction of a low concentration second conductivity type epitaxial layer 203 and a first conductivity type layer 212 is formed by forming the first conductivity type layer 212 on the lower surface of a surface electrode 210, and thereby a depletion layer 213 is formed, parasitic capacity due to the surface electrode 210 can be reduced. Even if the element capacity is reduced by contracting the area of a low capacity PN diode, capacity of a semiconductor element can be reduced by suppressing increase in the parasitic capacity due to the surface electrode.
Bibliography:Application Number: JP20130043608