ELECTRON BEAM LITHOGRAPHY APPARATUS
PROBLEM TO BE SOLVED: To solve such a problem that unintended irradiation with reflection electrons or secondary electrons cannot be prevented completely, in the improvement of an electron beam lithography apparatus including an antireflection mechanism for preventing the long-distance photosensitiv...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
07.08.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To solve such a problem that unintended irradiation with reflection electrons or secondary electrons cannot be prevented completely, in the improvement of an electron beam lithography apparatus including an antireflection mechanism for preventing the long-distance photosensitive action (unnecessary sensitization) incident to the reflection electrons emitted from the sample surface by irradiation with an electron beam or re-incidence of secondary electrons to the sample side.SOLUTION: An antireflection mechanism of a plate body having an antireflection structure provided, on the surface facing a sample, with a plurality of cuts having V-shaped cross section continuously comprises an antireflection structure for attenuating and absorbing the reflection electrons or secondary electrons, by reflecting the reflection electrons or secondary electrons emitted from the sample surface in each V-shaped cut a plurality of times. |
---|---|
Bibliography: | Application Number: JP20130216159 |