SEED USED FOR CASTING CRYSTAL SILICON INGOT

PROBLEM TO BE SOLVED: To provide a seed used for casting a crystal silicon ingot.SOLUTION: A seed in a desirable embodiment includes a crystal and an impurity diffusion prevention layer. The crystal is constituted of at least one particle. The impurity diffusion prevention layer is formed for coveri...

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Main Authors LAN CHUNG-WEN, CHOU HUNG-SHENG, SEO MUN-GYONG, HSIAO MING-KUNG, YANG YU-MIN, YU WEN-HUAI, HSU SUNG-LIN, CHIANG YU-TSUNG, LI IING
Format Patent
LanguageEnglish
Published 10.07.2014
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PROBLEM TO BE SOLVED: To provide a seed used for casting a crystal silicon ingot.SOLUTION: A seed in a desirable embodiment includes a crystal and an impurity diffusion prevention layer. The crystal is constituted of at least one particle. The impurity diffusion prevention layer is formed for covering the outer surface of the crystal. In a crystal silicon ingot formed by using the seed, a red region and a yellow region are remarkably reduced.
Bibliography:Application Number: JP20130270391