INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES AND METHOD OF MANUFACTURE

PROBLEM TO BE SOLVED: To provide a method for achieving a band end voltage threshold for both short and long channel devices.SOLUTION: A method is provided for manufacturing an integrated circuit including a short channel (SC) device 16 and a long channel (LC) device 18 each overlaid by an interlaye...

Full description

Saved in:
Bibliographic Details
Main Authors GEORGE J KLUTH, RICHARD J CARTER, MICHAEL J HARGROVE, JOHN G PELLERIN
Format Patent
LanguageEnglish
Published 26.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a method for achieving a band end voltage threshold for both short and long channel devices.SOLUTION: A method is provided for manufacturing an integrated circuit including a short channel (SC) device 16 and a long channel (LC) device 18 each overlaid by an interlayer dielectric 75. The SC device 16 has an SC gate stack 34, and the LC device 18 initially has a dummy gate 50. In one embodiment, the method includes the steps of removing the dummy gate to form an LC device trench, and depositing metal gate material over the SC device 16 and the LC device 18. The metal gate material contacts the SC gate stack 34 and substantially fills the LC device trench.
Bibliography:Application Number: JP20140010604