PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL

• Main Authors: NISHIGUCHI TARO, FUJIWARA SHINSUKE, OI NAOKI, UEDA SHUNSAKU, HORI TSUTOMU
• Format: Patent
• Language: English
• Published: 26.06.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a production method of a SiC crystal capable of producing efficiently a high-quality and large-diameter silicon carbide (SiC) crystal.SOLUTION: A production method of a SiC crystal includes steps for: preparing a seed crystal 10 comprising SiC; arranging the prepared seed crystal 10 in a crucible 2; and growing a SiC crystal layer 12 on the seed crystal 10 arranged in the crucible 2. In the step for growing the SiC crystal layer 12, a SiC ingot 13 in which the maximum value of the width as a view from a growing direction of the SiC crystal layer 12 exceeds 4 inches is formed by growing the SiC crystal layer 12 in an atmosphere containing He.