SEMICONDUCTOR DEVICE, SEMICONDUCTOR LAMINATED MODULE STRUCTURE, LAMINATED MODULE STRUCTURE AND MANUFACTURING METHODS OF THOSE

• Main Authors: YAMAGATA OSATAKE, SAWACHI SHIGENORI, KATSUMATA AKIO, INOUE KOJI
• Format: Patent
• Language: English
• Published: 19.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device which easily enables vertical lamination of LSI chips having different sizes from each other.SOLUTION: A semiconductor device comprises: an insulating substrate; a semiconductor element mounted on one principal surface of the insulating substrate with an element circuit surface up; a first insulating material layer A for encapsulating a top face of the element circuit surface of the semiconductor element and a top face of the insulating substrate around the element circuit surface; a first metal thin film wiring layer which is arranged on the first insulating material layer A and a part of which is exposed outside; a first insulating material layer B arranged on the first metal thin film wiring layer; a second insulating material layer arranged on the other principal surface of the insulating substrate; a second metal thin film wiring layer which is arranged in the second insulating material layer and a part of which is exposed outside; a via which pierces the insulating substrate and electrically connects the first metal thin film wiring layer and the second metal thin film wiring layer; and an external electrode formed on the first metal thin film wiring layer. The semiconductor device has a structure in which the second metal thin film wiring layer, an electrode arranged on the element circuit surface of the semiconductor element, the first metal thin film wiring layer, the via and the external electrode on the first metal thin film wiring layer are electrically connected.