METHOD FOR MANUFACTURING GROUP III NITRIDE FILM

• Main Authors: UEMATSU KOJI, YAMAMOTO YOSHIYUKI
• Format: Patent
• Language: English
• Published: 12.05.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride film capable of separating the group III nitride film grown on a substrate and having the same composition of constituent elements as the substrate at a high yield.SOLUTION: A method for manufacturing a group III nitride film comprises the steps of: growing a first III group nitride film 11 having the same composition of constituent elements as a group III nitride substrate 10 and a Si concentration of 1×10cmor more on the group III nitride substrate 10; growing a second III group nitride film 12 having the same composition of constituent elements as the first III group nitride film 11 and each impurity concentration of 1-2×10cmor less on the first III group nitride film 11; and decomposing the first III group nitride film 11 by irradiating a laminated film sheet 1 having the first III group nitride film 11 and the second III group nitride film 12 grown in this order on the group III nitride substrate 10 with a laser beam L having a wavelength of 8 μm or more and 12 μm or less to separate the second III group nitride film 12 from the group III nitride substrate 10.