DEFECT CORRECTION METHOD OF TEMPLATE FOR NANOIMPRINT LITHOGRAPHY, AND METHOD OF MANUFACTURING TEMPLATE FOR NANOIMPRINT LITHOGRAPHY

• Main Authors: NISHIGUCHI TAKAO, HIRAKA TAKAAKI, HATAKEYAMA SHO, YOSHIDA KOJI, INAZUKI YUICHI
• Format: Patent
• Language: English
• Published: 08.05.2014
• Subjects: AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; TRANSPORTING; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

PROBLEM TO BE SOLVED: To provide a defect correction method of a template for nanoimprint lithography capable of easily correcting both residue defect and deficiency defect, and to provide a method of manufacturing a template for nanoimprint lithography.SOLUTION: A hard mask pattern is formed by transferring a transfer pattern of a first template to a hard mask layer formed on a substrate constituting a second template, by using a first template having well-known defect position information. Defect of the hard mask pattern is corrected based on the defect position information of a transfer pattern of the first template, and then a transfer pattern of the second template is formed using the hard mask pattern subjected to defect correction as an etching mask.