FILM DEPOSITION APPARATUS

• Main Authors: USAMI TATSUMI, TAKAHASHI AKIHISA, MATSUZAKI JUNSUKE
• Format: Patent
• Language: English
• Published: 08.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; METALLURGY; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can hold a substrate temperature during film deposition to form a film of desired quality.SOLUTION: The film deposition apparatus is an inline type film deposition apparatus 1 that includes a plurality of film deposition chambers and forms a plurality of layers on a substrate, the apparatus at least including a first heat chamber 12 provided upstream from the plurality of film deposition chambers, and a second heat chamber 15 provided between the plurality of film deposition chambers.