FILM FORMATION APPARATUS

• Main Author: IIO ITSUSHI
• Format: Patent
• Language: English
• Published: 01.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film formation apparatus which enables securing of a working place without forming protrusions from a floor surface.SOLUTION: A film formation apparatus comprises: a vacuum chamber body 30 which has a carrier device 10 capable of carrying a substrate 101 in the carrying direction (Y direction) which intersects the plate thickness direction while the substrate 101 is erected so that the plate thickness direction (X direction) is horizontal, and which has an opening 31 opened to the inside formed therein; a chamber door 40 capable of opening and closing the opening 31 of the vacuum chamber body 30; and guiding means 80 arranged above the vacuum chamber body 30 and guiding the chamber door 40 in the plate thickness direction so as to allow the door 40 to move horizontally.