SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• Main Authors: KAWASE TOMOHITO, SHINOHARA HISAKUNI
• Format: Patent
• Language: English
• Published: 27.03.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can achieve excellent light-extraction efficiency with good repeatability.SOLUTION: A semiconductor light-emitting element 1 comprises: a substrate 2: a semiconductor layer 20 which is formed on the substrate 2 and includes a luminescent layer 4; and a diffraction/scattering film 11 formed between the luminescent layer 4 and the substrate 2. The diffraction/scattering film 11 has a lateral face 11a inclined with respect to a film thickness direction and has a composition gradient in relation to the film thickness direction for diffracting or scattering light produced by the luminescent layer 4. The semiconductor layer 20 may be a nitride semiconductor layer. In this case, the diffraction/scattering film 11 may be a growth inhibiting film for inhibiting growth of a nitride semiconductor when growing a nitride semiconductor layer on the substrate 2.