METHOD FOR FORMING MEMBER COMPOSED OF HIGH-MELTING POINT METAL CARBIDE, AND METHOD FOR MANUFACTURING MANUFACTURING DEVICE OF SILICON CARBIDE SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To provide a method for forming high-melting point metal carbide which can secure heat resistance and durability.SOLUTION: The method for forming a member composed of the high-melting point metal carbide includes: a first sintering step of forming the member composed of the hig...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
27.03.2014
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for forming high-melting point metal carbide which can secure heat resistance and durability.SOLUTION: The method for forming a member composed of the high-melting point metal carbide includes: a first sintering step of forming the member composed of the high-melting point metal carbide; and subsequently a second sintering step of promoting a reaction between the high-melting point metal carbide while suppressing decarbonization, to obtain durability and heat resistance. Thereby, the member of the high-melting point metal carbide can be formed, which can secure heat resistance and durability. |
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Bibliography: | Application Number: JP20120199546 |