METHOD FOR FORMING MEMBER COMPOSED OF HIGH-MELTING POINT METAL CARBIDE, AND METHOD FOR MANUFACTURING MANUFACTURING DEVICE OF SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: KUNO HIRONARI, HARA KAZUTO
• Format: Patent
• Language: English
• Published: 27.03.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMISTRY; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CRYSTAL GROWTH; LIME, MAGNESIA; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; REFRACTORIES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SLAG; TREATMENT OF NATURAL STONE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for forming high-melting point metal carbide which can secure heat resistance and durability.SOLUTION: The method for forming a member composed of the high-melting point metal carbide includes: a first sintering step of forming the member composed of the high-melting point metal carbide; and subsequently a second sintering step of promoting a reaction between the high-melting point metal carbide while suppressing decarbonization, to obtain durability and heat resistance. Thereby, the member of the high-melting point metal carbide can be formed, which can secure heat resistance and durability.