SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

• Main Authors: HATAKEYAMA KEIICHI, TAIRA MASAKO, MIYAHARA MASANOBU, OZAKI YOSHINOBU, MITSUKURA KAZUYUKI
• Format: Patent
• Language: English
• Published: 13.03.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits cracks of a semiconductor chip and double die pickup by improving pickup performance of the semiconductor chip and inhibits sinking of an end face of an adhesive layer.SOLUTION: A manufacturing method of a semiconductor device 1 comprises: a process of preparing a laminate A in which an adhesive layer 40 containing a radiation curable component is stacked on one surface 30a of a semiconductor wafer 30; a process of cutting the semiconductor wafer 30 of the laminate A by a rotary cutter B into a plurality of individual pieces (chip bodies 13); a process of irradiating the laminate A with radiation rays L from the other surface 30b side of the semiconductor wafer 30; a process of obtaining, from the laminate A, semiconductor chips 10 each including the individual piece 13 of the semiconductor wafer 30 which is cut into a plurality of pieces and irradiated with radiation rays, and a part 14 of the adhesive layer stacked on each of the individual pieces 13; and a process of manufacturing the semiconductor device 1 including the semiconductor chip 10.