PATTERN FORMATION METHOD AND SOLID-STATE IMAGE PICKUP DEVICE

PROBLEM TO BE SOLVED: To remove a residual product including a fluorine (F) component generated by etching without a damage.SOLUTION: There is provided a pattern formation method for forming a pattern in a silicon layer of a processed substrate in which a semiconductor device is formed on a surface...

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Bibliographic Details
Main Authors IWASAKI MINEHISA, HANEFUJI HIDEYUKI, OIKAWA YOSHISATO
Format Patent
LanguageEnglish
Published 24.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To remove a residual product including a fluorine (F) component generated by etching without a damage.SOLUTION: There is provided a pattern formation method for forming a pattern in a silicon layer of a processed substrate in which a semiconductor device is formed on a surface side thereof and the surface side is supported by a support substrate includes the steps of: etching the processed substrate by plasma via the mask formed in a prescribed pattern on a rear surface side of the silicon layer of the processed substrate; and cleaning the processed substrate by plasma using a cleaning gas which is a mixture of a CF-based gas and an inert gas after the etching step.
Bibliography:Application Number: JP20120176282