INTEGRATED CIRCUIT ELEMENT HAVING TSV STRUCTURE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide: an integrated circuit element having a TSV structure which can suppress a local extrusion phenomenon thereby providing a stable structure and an improved reliability; and a method of manufacturing the same.SOLUTION: The integrated circuit element includes a semicond...

Full description

Saved in:
Bibliographic Details
Main Authors PARK BEONG-RYUL, LEE DO-SUN, SON SUNG MIN, PARK KENSO, SAI KICHIGEN
Format Patent
LanguageEnglish
Published 03.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide: an integrated circuit element having a TSV structure which can suppress a local extrusion phenomenon thereby providing a stable structure and an improved reliability; and a method of manufacturing the same.SOLUTION: The integrated circuit element includes a semiconductor structure, and a through-silicon-via (TSV) structure penetrating through the semiconductor structure. The TSV structure includes: a first through electrode unit forming one end of the TSV structure and including impurities of a first concentration; and a second through electrode unit forming the other end of the TSV structure and including impurities of a second concentration greater than the first concentration.
Bibliography:Application Number: JP20130148651