SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent defects of a trim circuit section due to corrosion of a fuse.SOLUTION: Second wiring M2 is formed so as to be in contact with a second interlayer insulating film SZ2 that covers first wiring M1 formed on a primary surface of a semiconductor substrate SUB. The second...

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Bibliographic Details
Main Authors YOSHIHISA YASUKI, IMAI YUKARI
Format Patent
LanguageEnglish
Published 30.01.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To prevent defects of a trim circuit section due to corrosion of a fuse.SOLUTION: Second wiring M2 is formed so as to be in contact with a second interlayer insulating film SZ2 that covers first wiring M1 formed on a primary surface of a semiconductor substrate SUB. The second wiring M2 includes second wiring P1 including a fuse FH and extending, and second wiring P2 being spaced apart from the fuse FH. The second wiring P1 is electrically connected to the first wiring M1. Third wiring M3 is formed so as to be in contact with a surface of a third interlayer insulating film SZ3 that covers the second wiring M2. A stress relaxation portion SRL1 is formed between the second wiring P1 and the second wiring P2.
Bibliography:Application Number: JP20120155343