METHOD FOR MANUFACTURING METAL SUBSTRATE FOR GROWING CARBON NANOTUBE, OR THE LIKE

• Main Authors: NODA KYOHEI, KOMUKAI TAKUJI, SHIMOMOTO ATSUSHI
• Format: Patent
• Language: English
• Published: 30.01.2014
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal substrate capable of depositing a film by controlling the film thickness highly accurately, when depositing a catalyst film used for CNT growth on the metal substrate by sputtering film-deposition.SOLUTION: In a method for manufacturing a metal substrate used for deposition of a catalyst film for CNT growth by sputtering film-deposition, the metal substrate is thermally treated under a predetermined reduced pressure to discharge hydrogen gas before film deposition.