SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To contribute to the acceleration of a reading speed by suppressing data inversion (data destruction) caused by an SNM failure during reading an SRAM cell.SOLUTION: A capacitor CG1 connected to a storage node NA of an SRAM cell 160 and a word line WL to have an electrostatic ca...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
20.01.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | PROBLEM TO BE SOLVED: To contribute to the acceleration of a reading speed by suppressing data inversion (data destruction) caused by an SNM failure during reading an SRAM cell.SOLUTION: A capacitor CG1 connected to a storage node NA of an SRAM cell 160 and a word line WL to have an electrostatic capacitance between the storage node NA and the word line WL is provided. The capacitor CG1 relatively has a first electrostatic capacitance CL in the case that the word line WL is in a non-selection state (normally low level) and the storage node NA holds a high level, and has a second electrostatic capacitance CS smaller than the first electrostatic capacitance CL in the case that the word line WL is in a non-selection state (normally low level) and the storage node NA holds a low level. |
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| AbstractList | PROBLEM TO BE SOLVED: To contribute to the acceleration of a reading speed by suppressing data inversion (data destruction) caused by an SNM failure during reading an SRAM cell.SOLUTION: A capacitor CG1 connected to a storage node NA of an SRAM cell 160 and a word line WL to have an electrostatic capacitance between the storage node NA and the word line WL is provided. The capacitor CG1 relatively has a first electrostatic capacitance CL in the case that the word line WL is in a non-selection state (normally low level) and the storage node NA holds a high level, and has a second electrostatic capacitance CS smaller than the first electrostatic capacitance CL in the case that the word line WL is in a non-selection state (normally low level) and the storage node NA holds a low level. |
| Author | OBATA HIROYUKI |
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| Snippet | PROBLEM TO BE SOLVED: To contribute to the acceleration of a reading speed by suppressing data inversion (data destruction) caused by an SNM failure during... |
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| SubjectTerms | INFORMATION STORAGE PHYSICS STATIC STORES |
| Title | SEMICONDUCTOR DEVICE |
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