GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: UEMATSU KOJI, NAKAHATA SEIJI, FUJIWARA SHINSUKE, OSADA HIDEKI
• Format: Patent
• Language: English
• Published: 09.01.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a large diameter and in which surface orientation of a principal surface has a value other than (0001) and (000-1) and distribution of carrier concentration within the principal surface is substantially uniform, and a method of manufacturing the substrate.SOLUTION: In the GaN single crystal substrate 20p, an area of a principal surface 20pm is 10 cmor more, surface orientation of the principal surface 20pm is inclined by 65° or more and 85° or less to a (0001) surface or a (000-1) surface 20c, and distribution of carrier concentration within the principal surface 20pm is substantially uniform, that is, dispersion of carrier concentration to average carrier concentration within the principal surface 20pm is within ±50%, for example.