METHOD FOR FORMING SILICON-CONTAINING RESIST LOWER LAYER FILM

• Main Authors: IWABUCHI MOTOAKI, YOSHIHARA TAKAO, OGIWARA TSUTOMU
• Format: Patent
• Language: English
• Published: 26.12.2013
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; SEMICONDUCTOR DEVICES; SPRAYING OR ATOMISING IN GENERAL; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a method for forming a silicon-containing resist lower layer film, capable of reducing a coating defect after film formation by cleaning and removing deposits derived from a silicon-containing resist lower layer film material depositing and adhering in a pipe line of a coating and film formation device.SOLUTION: In a coating and film formation method of a silicon-containing resist lower layer film using spin coating, an alkaline aqueous solution is passed through a pipe line in a coating and film formation device using spin coating to clean the pipe line, and then a silicon-containing resist lower layer film material is supplied through the pipe line. Thus, the silicon-containing resist lower layer film is coated on a substrate to form a film.