COILS FOR GENERATING PLASMA AND FOR SPUTTERING

• Main Authors: NULMAN JAIM, GRUNES HOWARD, GOPALRAJA PRABURAM, SUBRAMANI ANANTHA K, TEPMAN AVI, FORSTER JOHN, EDELSTEIN SERGIO, XU ZENG
• Format: Patent
• Language: English
• Published: 26.12.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a sputtering coil for a plasma chamber in a semiconductor fabrication system.SOLUTION: A coil is preferably made of the same type of material as a target so that atoms sputtered from the coil combine with atoms sputtered from the target to form a layer of the desired type of material. The distribution of material sputtered from the coil tends to be thicker at the edges of a substrate and thinner toward the center of the substrate. Such a distribution compensates for the distribution profile of material sputtered from the target. As a consequence, the materials deposited from both the coil and the target can combine to form a layer of relatively uniform thickness from the center of the substrate to its edges.