SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING DEVICE
PROBLEM TO BE SOLVED: To grow a high quality SiC single crystal to a long length.SOLUTION: A counterbore 9a is provided by denting a pedestal 9 on the rear face of the pedestal 9. Then, thickness of the pedestal 9 is changed in a radial direction, making an outer edge side thicker than a central par...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
07.11.2013
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Subjects | |
Online Access | Get full text |
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