SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING DEVICE

• Main Authors: HARA KAZUTO, ONDA SHOICHI
• Format: Patent
• Language: English
• Published: 07.11.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To grow a high quality SiC single crystal to a long length.SOLUTION: A counterbore 9a is provided by denting a pedestal 9 on the rear face of the pedestal 9. Then, thickness of the pedestal 9 is changed in a radial direction, making an outer edge side thicker than a central part. Therefore, the outer edge of the pedestal 9 has larger thermal resistance than a central part by providing the counterbore 9a, increasing the radiation amount. As a result, the temperature of the central part of a SiC single crystal 20 becomes lower than that of the outer periphery surface side. Thus, it becomes possible to suppress the growth surface of the SiC single crystal 20 from becoming a concave shape, allowing the growth surface of the SiC single crystal 20 to become flat, and preferably allowing the central part of the growth surface to become a convex shape that protrudes more than the outer peripheral surface side. Accordingly, a crystal having higher quality can be continuously grown to a long length.