SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

PROBLEM TO BE SOLVED: To provide semiconductor devices and methods for fabricating the same which can realize high operating speed.SOLUTION: A semiconductor device includes a substrate, a first poly-silicon pattern arranged on the substrate, a metal pattern arranged on the first poly-silicon pattern...

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Bibliographic Details
Main Authors LEE MYUNG BUM, LEE JEONGGIL, HAN HAUK, LIM TAI SOO, LIM HYUN SEOK, YUN KIHYUN
Format Patent
LanguageEnglish
Published 28.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide semiconductor devices and methods for fabricating the same which can realize high operating speed.SOLUTION: A semiconductor device includes a substrate, a first poly-silicon pattern arranged on the substrate, a metal pattern arranged on the first poly-silicon pattern, and an interface film interposed between the first poly-silicon pattern and the metal pattern. The interface film includes at least one of a metal-silicon oxynitride film, a metal-silicon oxide film, and a metal-silicon nitride film.
Bibliography:Application Number: JP20130084652