MANUFACTURING APPARATUS AND MANUFACTURING METHOD FOR SILICON CARBIDE SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To control that exhaust is disturbed by an SiC polycrystal and a particle, and to enable continuous growth of the SiC single crystal.SOLUTION: A particle formation mechanism is composed by arrangement of a third heat insulating material 16 that protrudes from an inner wall surf...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
24.10.2013
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!