MANUFACTURING APPARATUS AND MANUFACTURING METHOD FOR SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: HARA KAZUTO, MAKINO HIDEMI
• Format: Patent
• Language: English
• Published: 24.10.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To control that exhaust is disturbed by an SiC polycrystal and a particle, and to enable continuous growth of the SiC single crystal.SOLUTION: A particle formation mechanism is composed by arrangement of a third heat insulating material 16 that protrudes from an inner wall surface of a heating vessel 8 enclosing a pedestal 9. Thereby, a rapid temperature gradient is formed, and a particle 18 is generated positively. Moreover, the particle 18 is recovered by a particle recovery mechanism 17. As a result, unconverted gas can be controlled to become polycrystal before being made to particle, and that a flow passage of exhaust gas is closed by the SiC polycrystal can be controlled, the particle 18 is recovered, thereby that the flow passage of the exhaust gas is closed by deposition of the particle 18 can be controlled. Therefore, obstruction of exhaust by the SiC polycrystal and the particle 18 can be controlled, and continuous growth of the SiC single crystal 20 can be performed.