SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which reduce variation in value of resistance of a wiring resistive element.SOLUTION: A semiconductor device comprises: wiring resistive elements 1A, 1B, 1C which are formed on a substrate 7 in a resistiv...

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Bibliographic Details
Main Authors NAKATSUKA YASUHIKO, HASHI TAKESHI, NOMA YUSUKE, YAGI TATESHI
Format Patent
LanguageEnglish
Published 10.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which reduce variation in value of resistance of a wiring resistive element.SOLUTION: A semiconductor device comprises: wiring resistive elements 1A, 1B, 1C which are formed on a substrate 7 in a resistive element region 71, a capacitance element region 72 and a memory cell region 73 by etching a first polysilicon layer 1; and an ONO film 2 is a laminated film of a silicon oxide film, a silicon nitride film and a silicon oxide film, which is provided on the wiring resistive elements 1A, 1B, 1C. A film thickness of the silicon nitride film used as a resistance protective film in the ONO film 2 is not less than 70 and not more than 600 .
Bibliography:Application Number: JP20120081432