METHOD OF PROGRAMMING SELECTION TRANSISTORS FOR NAND FLASH MEMORY

PROBLEM TO BE SOLVED: To precisely control a threshold voltage of selection transistors for flash memory.SOLUTION: Provided is a non-volatile memory device which includes a plurality of cells, a plurality of selection transistors each having a gate and coupled to the cells, and a selection line coup...

Full description

Saved in:
Bibliographic Details
Main Authors OSAMA KHOURI, BARTOLI SIMONE
Format Patent
LanguageEnglish
Published 07.10.2013
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To precisely control a threshold voltage of selection transistors for flash memory.SOLUTION: Provided is a non-volatile memory device which includes a plurality of cells, a plurality of selection transistors each having a gate and coupled to the cells, and a selection line coupled in common to the gates of the selection transistors. Also provided is a method based on the memory device, which includes applying a first program voltage to the selection line and, when at least one of the selection transistors has not been shifted to a program condition, applying a second program voltage to the selection line.
Bibliography:Application Number: JP20130026356